GaN基蓝光LED的多量子阱结构优化  

Optimization of multiple quantum well structure for GaN-based blue light emitting diode

作　　者：雷亮[1] 曾祥华[1] 范玉佩[1] 张勇[1] 

机构地区：[1]扬州大学物理科学与技术学院,江苏扬州225002

出　　处：《光电子．激光》2011年第9期1326-1331,共6页Journal of Optoelectronics·Laser

基　　金：江苏省科技资助项目(BG2007026);扬州市科技计划资助项目(YZ2009092)

摘　　要：基于量子阱结构中载流子遂穿势垒原理,使用APSYS软件模拟不同条件下具有不同垒高、垒宽及阱宽的发光二极管(LED)的I-V特性、光强和内量子效率(IQE)的变化,发现自发发射光谱存在红移现象。通过与传统LED的多量子阱(MQW)参数比较发现,当阱宽为2 nm、垒宽为4 nm、垒中In含量为0.08和驱动电流为20mA时,电压降低了18.43%,光强增加了11.46%,红移现象减小了5 nm。研究结果可为LED芯片的应用设计提供参考。According to the theory of electron tunneling barrier in quantum well structure,the photoelectric properties for GaN-based blue light emitting diodes（LEDs） with different heights,widths of the barrier and quantum well have been simulated by the APSYS software.The calculations of the I-V characteristics,light intensity,internal quantum efficiency at different conditions show that there is a red-shift in the spontaneous emission spectrum.Compared with the conventional quantum well parameters of LED,the optimized LED structures have better photoelectric properties with a voltage reduction of 18.43%,light intensity enhancement of 11.46% and red-shift reduction of 5 nm at a well width of 2 nm,barrier width of 4 nm,In component of 0.08 in barriers,and drive current of 20 mA.The obtained results may be beneficial to the design of the high performance LED.

关 键 词：InGaN/GaN多量子阱(MQW) 光谱强度 内量子效率(IQE) APSYS 

分 类 号：TN312.8[电子电信—物理电子学]