In situ high temperature X-ray diffraction studies of ZnO thin film  

作　　者：陈香存 周解平 王海洋 徐彭寿 潘国强 

机构地区：[1]National Synchrotron Radiation Laboratory,University of Science and Technology of China

出　　处：《Chinese Physics B》2011年第9期5-7,共3页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No.10490192)

摘　　要：An epitaxial ZnO thin film was entirely fabricated by pulsed laser deposition. Both the orientation and the size of the crystallites were studied. The X-ray diffraction （XRD） patterns of the film show strong c-axis oriented crystal structure with preferred （002） orientation. The Phi-sca~ XRD pattern confirms that the epitaxiM ZnO exhibits a single- domain wurtzite structure with hexagonal symmetry. In situ high-temperature XRD studies of ZnO thin film show that the crystallite size increases with increasing temperature, and （002） peaks shift systematically toward lower 20 values due to the change of lattice parameters. The lattice parameters show linear increase in their values with increasing temperature.An epitaxial ZnO thin film was entirely fabricated by pulsed laser deposition. Both the orientation and the size of the crystallites were studied. The X-ray diffraction （XRD） patterns of the film show strong c-axis oriented crystal structure with preferred （002） orientation. The Phi-sca~ XRD pattern confirms that the epitaxiM ZnO exhibits a single- domain wurtzite structure with hexagonal symmetry. In situ high-temperature XRD studies of ZnO thin film show that the crystallite size increases with increasing temperature, and （002） peaks shift systematically toward lower 20 values due to the change of lattice parameters. The lattice parameters show linear increase in their values with increasing temperature.

关 键 词：high temperature XRD ZnO thin films lattice parameters pulsed laser deposition 

分 类 号：O614.241[理学—无机化学]