Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transistors  

作　　者：蒲颜 庞磊 陈晓娟 袁婷婷 罗卫军 刘新宇 

机构地区：[1]Key Laboratory of Microelectronics Device & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2011年第9期396-402,共7页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China (Grant No.2010CB327503);the National Natural Science Foundation of China (Grant No.60890191)

摘　　要：The current voltage （IV） characteristics are greatly influenced by the dispersion effects in A1GaN/CaN high electron mobility transistors. The direct current （DC） IV and pulsed IV measurements are performed to give a deep investigation into the dispersion effects, which are mainly related to the trap and self-heating mechanisms. The results show that traps play an important role in the kink effects, and high stress can introduce more traps and defects in the device. With the help of the pulsed IV measurements, the trapping effects and self-heating effects can be separated. The impact of time constants on the dispersion effects is also discussed. In order to achieve an accurate static DC IV measurement, the steady state of the bias points must be considered carefully to avoid the dispersion effects.The current voltage （IV） characteristics are greatly influenced by the dispersion effects in A1GaN/CaN high electron mobility transistors. The direct current （DC） IV and pulsed IV measurements are performed to give a deep investigation into the dispersion effects, which are mainly related to the trap and self-heating mechanisms. The results show that traps play an important role in the kink effects, and high stress can introduce more traps and defects in the device. With the help of the pulsed IV measurements, the trapping effects and self-heating effects can be separated. The impact of time constants on the dispersion effects is also discussed. In order to achieve an accurate static DC IV measurement, the steady state of the bias points must be considered carefully to avoid the dispersion effects.

关 键 词：dispersion effects pulsed current voltage measurement TRAP SELF-HEATING 

分 类 号：TN32[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]