Bipolar resistive switching in Cr-doped TiO_x thin films  

作　　者：邢钟文 A.Ignatievb 

机构地区：[1]National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering,Nanjing University [2]Center for Advanced Materials and Department of Physics,University of Houston

出　　处：《Chinese Physics B》2011年第9期435-438,共4页中国物理B（英文版）

基　　金：Project supported by NASA,the State of Texas through the Center for Advanced Materials,Sharp Laboratories of America,Semiconductor Research Corporation,the R.A.Welch Foundation (Grant No.#E-632);the National Natural Science Foundation of China (Grant No.11074109);the Natural Science Foundation of Jiangsu Province of China (Grant No.SBK200920627);the National Basic Research Program of China (Grant No.2010CB923404);the National "Climbing" Program of China (Grant No.91021003)

摘　　要：The electric-pulse-induced resistive switching effect is studied for Tio.s5Cro.15Ox （TCO） films grown on Ir-Si substrates by pulsed laser deposition. Such a TCO device exhibits bipolar switching behaviour with an electric-pulse- induced resistance ratio as large as about 1000% and threshold voltages smaller than 2 V. The resistive switching characteristics may be understood by resistance changes of a Schottky junction composed of a metal and an n-type semiconductor, and its nonvolatility is attributed to the movement of oxygen vacancies near the interface.The electric-pulse-induced resistive switching effect is studied for Tio.s5Cro.15Ox （TCO） films grown on Ir-Si substrates by pulsed laser deposition. Such a TCO device exhibits bipolar switching behaviour with an electric-pulse- induced resistance ratio as large as about 1000% and threshold voltages smaller than 2 V. The resistive switching characteristics may be understood by resistance changes of a Schottky junction composed of a metal and an n-type semiconductor, and its nonvolatility is attributed to the movement of oxygen vacancies near the interface.

关 键 词：resistive random-access memory （RRAM） electrical-pulse-induced resistive （EPIR） 

分 类 号：O484.42[理学—固体物理]