硅材料外加直流电场诱导的线性电光效应  

Linear electro-optic effect induced by DC electric field applied in silicon

作　　者：朱景程[1] 贾刚[1] 刘秀环[1] 孙鉴波[1] 张志平[1] 赵建勋[1] 牟晋博[1] 陈占国[1] 

机构地区：[1]集成光电子学国家重点联合实验室(吉林大学实验区)吉林大学电子科学与工程学院,吉林长春130012

出　　处：《红外与激光工程》2011年第8期1485-1489,共5页Infrared and Laser Engineering

基　　金：国家863计划(2009AA03Z419);国家自然科学基金(61077026;60976043);中俄合作交流资助项目(60711120182;60811120023)

摘　　要：在直流电场作用下,硅单晶的反演对称性被破坏,从而诱导产生二阶非线性光学效应。主要研究了硅材料在外加直流电场作用下诱导产生的场致线性电光效应。以沿(111)面切割的近本征硅材料为样品,采用平行板电容器结构,通过横向电光调制实验,观测到在不同直流偏压下,电光信号随调制电压而线性增加,且直流偏压越大,电光信号增加的斜率越大。进一步的研究表明:硅材料场致线性电光信号的大小随直流偏压的增加而线性增加。这种场致线性电光效应可被用于制作新型的硅基高速电光调制器。The DC electric field can break the inversion symmetry of silicon, thus induce the second- order nonlinear optical effect in silicon. Linear electro-optic effect induced by the applied DC electric field was mainly researched in silicon crystal. （lll）-cut near-intrinsic silicon was used as the sample, which adopted a planar capacitor configuration. Experiments of the transverse electro-optic modulation show that the electro-optic signal linearly increases with the increase of the modulating voltage when different DC biases are applied on silicon sample, moreover, the higher the DC bias, the steeper the rising slope of electro-optic signal. Further studies indicate that the electric-field-induced linear electro- optic signal is linearly increasing with the increase of the DC bias. The electric-field-induced linear electro-optic effect can be used for manufacturing novel high-speed silicon electro-optic modulators.

关 键 词：硅基光电子学 二阶非线性光学效应 场致线性电光效应 横向电光调制 

分 类 号：O436[机械工程—光学工程]