等离子体处理对ITO表面化学镀铜的影响  

The Effect of Electroless Copper on ITO Surface by Using Plasma Processing

作　　者：张官理[1] 樊兆雯[2] 张月平[2] 

机构地区：[1]北京航空材料研究院,北京100095 [2]东南大学电子科学与技术学院,南京210096

出　　处：《电子器件》2011年第4期402-405,共4页Chinese Journal of Electron Devices

摘　　要：由于常规的化学镀铜层存在易剥落、不均匀、清洁度差等问题,所以提出在化学镀铜工艺之前增加等离子体处理工序。通过改变等离子体功率、处理时间和处理距离等参数,使ITO表面获得较好的化学镀铜层。实验结果表明,处理距离越短对减小水接触角、提高清洁度和附着力越有利;而等离子体功率和处理时间对基板表面状态的影响不是单调的。因此通过选择合适的等离子体功率、处理时间和处理距离,可以获得附着力好、清洁度高的化学镀铜层。As conventional electroless copper layer are easy to peel,uneven and poor cleanness, so we increase a plasma treatment process before the chemical copper plating. By changing the process parameters such as plasma power, treatment time and distance, a better chemical copper plating layer in the surface of ITO can be obtained. The results showed that the shorter the distance, the better to minimize the water contact angle, to improve cleanliness and adhesion ;and the effect that plasma power and treatment time on the state of the substrate surface is not monotonous. Therefore,we can get the chemical copper plating layer with good adhesion and high cleanliness by selecting the appropriate plasma power, treatment time and treatment distance.

关 键 词：非金属表面化学镀铜 等离子体 表面处理 附着力 洁净度 

分 类 号：TL67[核科学技术—核技术及应用]