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机构地区:[1]西北工业大学,陕西西安710072 [2]安康学院,陕西西安725000 [3]中国电子科技集团公司第十三研究所,河北石家庄050051
出 处:《电子技术应用》2011年第9期111-113,共3页Application of Electronic Technique
基 金:国家自然科学基金(61075029);国家自然科学基金(61074155)资助
摘 要:利用纯电磁场仿真软件CST仿真分析了V频段对脊鳍线微带波导过渡结构和性能,得出了可供工程应用参考的设计曲线,并根据曲线设计了波导-微带过渡,对仿真过程进行了优化。仿真结果表明,在V频段内单个过渡插入损耗和背靠背过渡插入损耗均小于0.3 dB。这种紧凑的过渡模型不仅结构简单、尺寸短小,而且可以在宽频带范围内实现较低的插入损耗和回波损耗,方便工程应用。A V-band antipodal finline waveguide-to-microstrip transition was analyzed and simulated by CST Microwave studio software. The several factors of simulation result for affecting performance of transition are analyzed and a design curve of transition available for project application is obtained. Based on the curve, the waveguide-to-microstrip transition is designed. The insertion loss of transition is below 0.3 dB in the V-band. Experimental results coincide well with the design curve. This compact transition has low insertion loss, low reflection performance in wide band, as well as small and compact structure size. It is useful in engi- neering application.
分 类 号:TN631[电子电信—电路与系统]
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