9,9′-联蒽/SiO_2表面及界面的AFM和XPS的研究  

Surface and interface analysis of 9,9′-bianthracene/SiO_2 using AFM and XPS

作　　者：李建丰[1] 宋青[1] 牛振川[1] 刘林东[1] 张福甲[2] 

机构地区：[1]兰州交通大学数理与软件工程学院,甘肃兰州730070 [2]兰州大学物理与科学技术学院,甘肃兰州730000

出　　处：《功能材料》2011年第9期1660-1662,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(60676033);兰州交通大学大学生创新实验计划资助项目(201046)

摘　　要：在热氧化硅片的衬底上真空蒸镀了1层9,9′-联蒽的薄膜。利用原子力显微镜和X射线光电子能谱对其表面及界面的形貌和电子状态进行了分析。结果发现表面极不平整,存在大量裂缝和空隙,并吸附了空气中大量的气体分子;9,9′-bianthracene薄膜中的氧,主要来自表面吸附的氧气和水分子的扩散以及湿氧氧化时残留在氧化层中水分子和氧分子的扩散。所以对OFET而言,采用溅射工艺制备的SiO2层应比热氧化生长的SiO2层更合适。The 9,9′-bianthracene was deposited on SiO2 with dry oxidation by vacuum evaporation.Its morphology is characterized by atomic force microscopy（AFM）,and the electron states are investigated by X-ray photoelectron spectroscopy（XPS）.Analysis shows unwell distributed and film quality of 9,9′-bianthracene on SiO2 was very rough with many cracks and pores,which can lead to heavy absorption of gas molecules.The oxygen can only result from the diffusion of O in the SiO2 layer and of H2O and O2 molecules absorbed at the CuPc film surface.SiO2 layers produced by spurting technology are better than those produced by oxidation technology in OFET.

关 键 词：9 9′-联蒽 AFM XPS 

分 类 号：TN304.5[电子电信—物理电子学]