非晶硅薄膜光伏电池结构参数分析  

Analyses of Structure Parameters of Amorphous Silicon Film Photovoltaic Cells

作　　者：吴定允[1,2] 彭玉峰[1] 赵纪昌[1] 毕小群[1] 张毅[1] 

机构地区：[1]河南省光伏材料重点实验室(河南师范大学),河南新乡453007 [2]周口师范学院物理与电子工程系,河南周口466000

出　　处：《激光与光电子学进展》2011年第9期157-160,共4页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(61077037);河南省基础与前沿技术研究计划(102300413214)资助课题

摘　　要：考虑到nip型[ITO/a-Si(n)/a-Si(i)/a-Si(p)/Al]非晶硅光伏电池的各膜层厚度、掺杂浓度等因素,对非晶硅光伏电池的转换效率、填充因子、开路电压等性能参数进行了数值分析与讨论。结果表明,随p型层厚度的增加,光伏电池的短路电流密度、转换效率、开路电压值都有所增加。当本征层的厚度增加时,短波段内的光谱响应变差、内量子效率下降。当n型层厚度为5 nm,本征层厚度为5 nm,p型层厚度为10μm,受主掺杂浓度为2.5×1019cm-3,施主掺杂浓度为1.5×1016cm-3时,转换效率可达9.728%。Taking into account the film layer thickness and silicon impurities of amorphous silicon solar cells with the nip-typeEITO/a-Si （n）/a-Si （i）/ a-Si （p）/Al] structure, the conversion efficiency, fill factor, and open circuit voltage of the nip-type amorphous silicon solar ceil are numerically analyzed and discussed. The results show that the short circuit voltage, conversion efficiency, and open circuit voltage increase as the thickness of p-type layer increases. With the increase in the thickness of intrinsic layer, the spectrum characteristics for the short wavelength range becomes worse and the quantum efficiency degrades. When the thickness of n-type, intrinsic, and p-type layers are 5 nm, 5 nm, 10μm, respectively, the conversion efficiency gets to 9. 728 % for the donor impurity concentration of 1.5×10^16cm^-3 and the acceptor impurities of 2.5×10^19cm^-3.

关 键 词：光电子学 光伏电池 非晶硅 纳米薄膜 nip型 转换效率 

分 类 号：TK511.4[动力工程及工程热物理—热能工程]