用古斯-亨兴位移研究PMN-PT电光陶瓷的电光效应  

Study on Electro-Optic Effect of PMN-PT Ceramics Using Goos-Hnchen Shift

作　　者：冉茂武[1,2] 曹庄琪[2] 陈险峰[2] 陈凡 

机构地区：[1]铜仁学院物理与电子科学系,贵州铜仁554300 [2]上海交通大学物理系区域光纤通信网和新型光通信系统国家重点实验室,上海200240 [3]菲尼萨光电通讯有限公司,上海201201

出　　处：《中国激光》2011年第9期134-137,共4页Chinese Journal of Lasers

基　　金：国家自然科学基金(60677029;10874119和10874121);"西部之光"访问学者计划基金项目资助课题

摘　　要：根据对称金属包覆电光波导中本征损耗与古斯-亨兴(Goos-Hnchen)位移的理论公式,导出了古斯-亨兴位移与作用于波导两侧电压的二次关系公式。用622μm厚度的四方相铌镁酸铅-钛酸铅(PMN-PT)透明电光陶瓷片作为导波层制备了对称金属包覆波导,测量了古斯-亨兴位移与作用于波导两侧电压的关系曲线,计算了所用透明电光陶瓷片的二次电光系数。实验结果与理论分析一致。The Goos-H/inchen shift at both sides of the waveguide is conducted, which gives rise to a quadric-curve relation between Goos-H/inchen shift and the applied voltage, based on the theoretical analysis of the intrinsic loss in a symmetrical metal-cladding electro-optic waveguide. A symmetrical metal-cladding waveguide is fabricated with a 622μm-thick Pb（Mgl/a Nb2/3 O3 ）-PbTiO3 （PMN-PT） transparent ceramic which serves as the guiding layer of the waveguide. Measurements of the relation between Goos-Hfinchen shift and the applied voltage are carried out and the quadratic electro-optic coefficient of the PMN-PT ceramic is obtained. Experimental results are agreed well with the numerical simulations.

关 键 词：非线性光学 古斯-亨兴位移 光波导 四方相铌镁酸铅-钛酸铅 

分 类 号：O437.4[机械工程—光学工程] TM286[理学—光学]