磁性金属纳米结构的畴壁特性与磁逻辑电路构筑  

The domain wall in nanostructure of ferromagnetic metal and magnetic logic gate

作　　者：顾长志[1] 徐鹏[1] 姚宗妮[1] 姜倩晴[1] 杨海方[1] 李俊杰[1] 夏钶[2] 

机构地区：[1]中国科学院物理研究所微加工实验室,北京100190 [2]北京师范大学物理系,北京100875

出　　处：《物理学进展》2011年第3期185-197,共13页Progress In Physics

基　　金：国家自然科学基金(批准号:50825206;60871045;10834012);科技部国家重大科学研究计划(批准号:2009CB930502)

摘　　要：自旋电子学由于其丰富的物理内涵和广泛的应用前景受到学术界和工业界的高度重视,成为近年来凝聚态物理和信息技术领域关注的焦点。本文介绍了利用磁性金属纳米结构实现作为自旋电子器件基础的自旋注入的方法,特别涉及利用铁磁金属纳米点接触结构钉扎磁畴的特点,研究自旋极化电流与磁畴壁的相互作用规律,理解纳米结构中畴壁的动力学行为,并以此为基础构筑结构简单、性能优异的全金属磁逻辑电路,从而实现了由电信号驱动,通过电信号检测,并与CMOS技术兼容的目的。Spintronic devices often include low power dissipation, nonvolatile data retention and high integration densities. In the last decade, many researchers have been concentrating on the new technology of spintronic devices. In this paper, the interactions between the magnetic domain wall pinned in nanostructure of ferromagnetic metal and spin polarized electron were introduced. Based on the phenomena that the domain wall in ferromagnetic materials could be driven by the electric current, the all metallic logical gates can be fabricated by nanocontacts using nanofabrication technology, then the information could be written in and read out by current.

关 键 词：纳米点接触结构 磁畴壁 自旋电子输运 磁逻辑电路 

分 类 号：O482.5[理学—固体物理] TN431.2[理学—物理]