退火温度对Eu^(3+)掺杂TiO_2-SiO_2复合薄膜的发光影响  

Effect of Temperature on the Photoluminescence of Eu^(3+) Doped TiO_2-SiO_2 Composite Films

作　　者：赵建果[1,2] 赵阿可[1] 谢二庆[2] 张伟英[1] 刘照军[1] 

机构地区：[1]洛阳师范学院物理与电子信息学院,河南洛阳471022 [2]兰州大学物理科学与技术学院,甘肃兰州731000

出　　处：《功能材料与器件学报》2011年第4期412-416,共5页Journal of Functional Materials and Devices

基　　金：河南省科技攻关项目(102102210448;102102210452);洛阳师范学院博士基金(10000887);河南省教育厅自然科学研究计划项目(2010A140011)

摘　　要：用溶胶-凝胶法制备了Eu3+离子掺杂的TiO2-SiO2复合薄膜并研究了退火温度对复合薄膜的光致发光的影响。并采用XRD、Raman和光致发光谱对其进行了一系列的表征。在退火温度为700℃的时候,Eu3+离子引起的发光强度是最强的,而随着退火温度的升高由TiO2本身的Ti3+离子缺陷能级引起的在近红外820nm处的发光峰的强度变得越来越强,一方面是因为随着退火温度的升高Ti3+离子增多,即缺陷能级数量增多,另一方面是Eu3+离子的能量背传递给Ti3+离子缺陷能级,这两个原因导致820nm处的发光峰强度随退火温度而增强。Eu3＋ ions doped TiO2-SiO2 composite thin films with different annealing temperature were fabricated by sol-gel method.The crystal structure and luminescence properties of the resulting nanofibers were separately investigated by X-ray diffraction（XRD）,Raman,Fourier Transform Infrared Spectra（FTIR） and photoluminescence（PL） spectra.The intensity of visible emission due to Eu3＋ ions reaches maximum when annealing temperature is at 700℃.The intensity of the infrared emission at 820nm due to the defect states associated with Ti3＋ ions increases with the annealing temperature increasing.On one hand,the number of Ti3＋ ions increases with the annealing temperature increasing,which causes the increase of defect levels;on the other hand,the energy back transfers from Eu3＋ ions to defect level associated with Ti3＋ ions.These two facts lead to the increase of the emission intensity at 820nm with the annealing temperature increasing.

关 键 词：TIO2-SIO2 光致发光 缺陷能级 能量传递 

分 类 号：TN104.3[电子电信—物理电子学]