ZnO同质pn结发光二极管研究进展  

Progress in ZnO Homogeneous pn Junction Light Emitting Diode

作　　者：薛书文[1] 

机构地区：[1]湛江师范学院物理系,广东湛江524048

出　　处：《半导体光电》2011年第4期455-458,共4页Semiconductor Optoelectronics

摘　　要：氧化锌是一种在短波长光电器件领域有巨大应用价值的Ⅱ-Ⅵ族化合物半导体材料,制备性能优良的ZnO同质结是ZnO在光电器件领域获得应用的关键之一。文章综述了近几年ZnO同质结发光二极管研究进展,详细介绍了各种结构ZnO同质结发光二极管的最新研究成果和存在的问题,并对ZnO同质结发光二极管的发展趋势进行了展望。ZnO is an important Ⅱ-Ⅵ semiconductor for short-wave excitonic optoelectronic applications. To fabricate good quality ZnO homogeneous junction is the key for its application in optoelectronic devices. The reseach progresses in recent years in and abroad are summarized and existing problems of ZnO homogeneous junction with different structures are introduced in detail. Finally, the development trends are prospected.

关 键 词：氧化锌 同质结 发光二极管 光电器件 

分 类 号：TN312.8[电子电信—物理电子学]