1024×1024全帧CCD器件  

1024×1024 Full Frame CCD Devices

作　　者：翁雪涛[1] 唐遵烈[1] 周建勇[1] 龙飞[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2011年第4期459-461,共3页Semiconductor Optoelectronics

摘　　要：采用2μm设计规则,在2μm工艺线上,成功研制了1 024×1 024全帧CCD器件。该1 024×1 024全帧CCD器件的有效像元数为1 024×1 024,像元尺寸为11μm×11μm,有效光敏面积为11.3mm×11.3mm,光响应波长范围为400～1 100nm。成像区域横向分为2个区,纵向分为2个区,可由1路、2路和4路输出,有9种读出模式。该器件具有2×2的像元合并功能,能作为512×512(像元尺寸为22μm×22μm)和规格的器件使用。该器件数据速率为4×40M,数据速率高。器件采用MPP工作模式,暗电流低;采用薄栅氧化,具有100krad(Si)抗辐照能力;适合在高温、辐照环境和微光环境下成像应用。By using 2 μm design rules and silicon technology, 1 024× 1 024 full frame CCD devices were designed and fabricated on 2 μm process. Parameters of the CCD devices are： the effective pixel is 1 024 × 1 024, pixel size is 11 μm× 11μm, effective photosensitive area is 11.3 mm×11. 3 mm, and the response is in 400-1 100 nm wavelength range. The image zone is divided into two zones in the vertical direction, and two zones in the horizontal direction. The devices have four video output ports, nine main modes and binning function, and they can be used as 512×512 CCD devices with the pixel size of 22μm×22μm. The 1 024×1 024 full frame CCD devices applying MPP working modes have low dark current and 100 krad（Si） anti-radiation. The devices are suitable for imaging applications under the conditions of high-temperature, radiation and glimmering.

关 键 词：CCD 全帧转移 抗辐射 

分 类 号：TN386.5[电子电信—物理电子学]