基于CCD工艺的模型参数提取测试图形设计  

Design of Testchip for Model Parameter Extraction Based on CCD Process

作　　者：祝晓笑[1] 石念[1] 杨洪[1] 翁雪涛[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2011年第4期492-494,572,共4页Semiconductor Optoelectronics

摘　　要：介绍了一套基于CCD工艺的模型参数提取用测试图形(Testchip)设计方法。该Testchip的设计充分考虑了CCD工艺特征、中测测试条件、CCD放大器特性等各种关键因素,并在对应的工艺线进行流片,得到了完整的测试数据。A design method of process is presented. In this method, technology and CCD on-chip amplifier corresponding processing line, and full testchip for model parameter extraction based on CCD factors such as test conditions, and characters of CCD are considered. Finally, test chips are fabricated in the testing data about the chips are acquired.

关 键 词：CCD 模型参数提取 测试图形 

分 类 号：TN386.5[电子电信—物理电子学]