掺锂氧化锌纳米线的光致发光特性  

Luminescence Properties of Li-doping ZnO Nanowires

作　　者：潘志峰[1] 陈长青[1] 李云涛[1] 唐伟跃[1] 李立祥[1] 

机构地区：[1]郑州大学物理工程学院,郑州450000

出　　处：《半导体光电》2011年第4期506-508,512,共4页Semiconductor Optoelectronics

基　　金：河南省基础与前沿技术研究计划项目(112300410020);河南省教育厅自然科学研究项目(2011A140024)

摘　　要：氧化锌(ZnO)是直接宽带隙半导体材料,有高达60meV的激子束缚能,是下一代短波长光电材料的潜在材料。首先制备了优良的多孔氧化铝(Anodic Aluminum Oxide)有序孔洞阵列;以其为模板,采用直流电化学沉积的方法,在其规则排列的孔中沉积得到锌的纳米线;然后将其在高温下氧化,得到氧化锌的纳米线。XRD图显示Li掺杂前后的ZnO纳米线具有较好的晶态结构。对Li掺杂前后的ZnO纳米线进行光学特性测量,结果表明,ZnO纳米线有两个发光峰,分别位于382nm和508nm处;Li掺杂较大地改善了ZnO纳米线的发光性能,本征发光峰移到395nm处,蓝绿发光强度也有了很大程度的提高。Zinc oxide （ZnO）is considered to be the next generation shorter wavelength semiconductor because of its wide band gap and 60 meV exciton binding energy. The AAO （Anodic Aluminum Oxide）template was formed by anodizing aluminum in the oxalicacid of 0. 3 mol/L at 40 V and through two-step anodizing oxide method. Then AAO template was used to synthesize Zn nanowires by the method of electrochemical deposition. Then ZnO nanowire arrays were obtained by oxidating the Zn nanowires under high temperature. XRD images show the ZnO nanowires before/after Li doping own good crystalline structure and the TEM images show that the diameter and length of the ZnO nanowires are about 50 nm and 20 tzm, respectively. The luminescence spectra have two emission peaks at about 382 nm and 508 nm. It is demonstrated that Li-doping has great effect on the luminescence property of ZnO nanowires, the intrinsic emission peak at 382 nm shifts to 395 nm, and the intensity of the emission peak at 508 nm increases greatly.

关 键 词：氧化锌纳米线 掺杂 发光特性 

分 类 号：TN304.2[电子电信—物理电子学]