中间相炭微球为炭源反应形成SiC陶瓷及其结构与性能  

Microstructure and properties of reaction-formed SiC ceramic derived from mesocarbon microbeads

作　　者：夏鸿雁[1] 王继平[1] 黄斌[1] 乔冠军[1] 

机构地区：[1]西安交通大学金属材料强度国家重点实验室,西安710049

出　　处：《固体火箭技术》2011年第4期514-519,共6页Journal of Solid Rocket Technology

基　　金：国家自然科学基金(50972117)

摘　　要：以中间相炭微球和SiC粉为原料,模压渗硅制备了反应形成SiC陶瓷。计算了制品各相含量随SiC粉掺量、渗硅温度和保温时间改变的变化规律,同时测试了制品性能,并通过SEM观察了制品表面形貌。计算结果表明,随SiC粉掺量的增加,硅化后制品Si和SiC相体积分数提高,C相体积分数降低;渗硅温度的提高可降低制品开气孔率和提高密度,同时SiC相含量相对明显提高。性能测试结果表明,制品具有较低的电阻率(最低值0.36μΩ.m)和较高的强度(最高值359MPa)。腐蚀后表面SEM形貌表明,制品中存在2种不同粒径的SiC颗粒,说明存在不同的Si/C反应机理。Reaction-formed SiC was fabricated by mesocarbon microbeads（MCMBs）and SiC powder through molding and Si infiltration.The changes of volume fractions of phases as functions of SiC powder content,silicinized temperature and holding time were calculated.Meanwhile,the properties were tested and the morphologies of surfaces were investigated by SEM.The calculated results show that volume fractions of Si and SiC phases increase with increasing SiC powder content,and that of C phase decreases;the open porosity decreased and density increases with increasing silicinized temperature,meanwhile the content of SiC phase clearly increases.The performance experimental results indicate that the samples have low electric resistivity（the lowest value of 0.36 μΩ·m）and high banding strength（the highest value of 359 MPa）.The etched surfaces of SEM micrographs show that there are two sizes of SiC particles,indicating there existing different silicon/carbon reaction mechanisms.

关 键 词：中间相炭微球 反应形成SiC 相含量 反应机理 

分 类 号：V254.2[一般工业技术—材料科学与工程]