激光二极管侧面泵浦高功率266nm紫外激光器  

Laser diode-side-pumped high power 266 nm ultraviolet laser

作　　者：李斌[1] 姚建铨[1] 丁欣[1] 张帆[1] 王鹏[1] 

机构地区：[1]天津大学精密仪器与光电子工程学院,光电信息教育部重点实验室,天津300072

出　　处：《强激光与粒子束》2011年第8期2065-2068,共4页High Power Laser and Particle Beams

基　　金：高等学校博士学位基金项目(20070056086);博士后科学基金项目(20090450760);国家自然科学基金项目(60978021);国家高技术发展计划项目

摘　　要：报道了一种半导体激光列阵侧面泵浦Nd:YAG四倍频266nm全固态紫外激光器,采用Z型腔结构,Ⅰ类临界相位匹配LBO和BBO晶体分别作为二倍频晶体和四倍频晶体。在调制频率为5kHz时,最终获得了2.1W的266nm紫外激光输出,单脉冲能量420μJ,绿光到紫外激光的转换率为13.13%,在相同的泵浦功率下利用V型腔结构仅获得305mW的266nm紫外激光输出。An all-solid-state laser diode（LD）-side pumped Nd：YAG ultraviolet（UV） laser at 266 nm is rcporlcd, whicl~ is based on fourth harmonic generation and adopts zigzag cavity structure. The type-Ⅰ critical phase matched LBO and BBO crystals are used as the second harmonic and fourth harmonic generation crystals, respectively, and 2.1 W UV laser of 266 nm with single pulse energy of 420 μJ is obtained at the pulse repetition rate of 5 kHz with the conversion efficiency of 13. 13% from green to ertraviolet light. With V shaped cavity configuration, only 305 mW 266 nm UV laser is obtained under the same condition.

关 键 词：激光二极管 侧面泵浦 四倍频 Z型腔 Ⅰ类临界相位匹配 BBO晶体 紫外激光 

分 类 号：TN248.1[电子电信—物理电子学]