一种用于非致冷红外焦平面读出电路的带隙基准源  

A Bandgap Reference for Uncooled IRFPA Readout Circuits

作　　者：李凯[1] 周云[1] 蒋亚东[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《红外》2011年第9期1-4,共4页Infrared

基　　金：国家自然科学基金资助项目(61021061);电子科技大学富通翱翔计划科研基金(FTAX201013)

摘　　要：设计了一种用于新型非致冷红外焦平面阵列读出电路的低温漂低压带隙基准电路。提出了同时产生带隙基准电压源和基准电流源的技术。通过改进带隙基准电路中的带隙负载结构及基准核心电路,可以分别对基准电压和基准电流进行温度补偿。在0.5μm CMOS N阱工艺条件下,采用Spectre软件进行了模拟验证。仿真结果表明,在3.3 V条件下,在-20～100℃范围内,带隙基准电压源和基准电流源的温度系数分别为35.6ppm/℃和37.8ppm/℃。在直流情况下,基准电压的电源抑制比(PSRR)值为-68dB。基准源电路的供电电压范围为2.2～4.5V。A low temperature drift and low voltage bandgap reference is designed for a new uncooled infrared focal plane array （IRFPA） readout circuit. The technique which can be used to provide both reference voltage output and reference current output is proposed. By modifying the bandgap load and reference core circuit in the bandgap reference circuit, the reference voltage and current can be compensated for temperature respectively. When using a 0.5 μm N well CMOS technology, simulation is carried out by using the Spectre software. The result shows that the temperature coefficients of the voltage output and the current output are 35.6 ppm/℃ and 37.8 ppm/℃ respectively in the temperature range from -20 ℃ to 100 ℃ at 3.3 V. The power-supply rejection ratio （PSRR） is -68 dB at DC. The circuit can operate in the range from 2.2 V to 4.5 V.

关 键 词：基准电压 基准电流 带隙负载结构 温度系数 电源抑制比 

分 类 号：TN432[电子电信—微电子学与固体电子学]