纳米氧化锌薄膜掺杂失效的重要因素  

An important factor for doping failure of nano ZnO film

作　　者：张治国[1] 

机构地区：[1]泉州师范学院功能材料研究所,泉州362000

出　　处：《科学通报》2011年第25期2133-2138,共6页Chinese Science Bulletin

基　　金：福建省高校服务海西建设重点项目(A100);福建省教育厅A类科技项目(JA08210)资助

摘　　要：从纳晶薄膜的形貌出发,根据纳晶氧化锌薄膜的几种构成归纳了几点近似说明.这几点说明旨在把纳晶薄膜和单晶薄膜区分开来,同时利用Kronig-Penney模型计算了纳晶薄膜的带尾态分布,设定了一个特征函数,给出了不同c/b值下带尾态分布图.根据这些图形的特点进一步分析了纳晶氧化锌薄膜的掺杂失效现象和薄膜成为绝缘体的条件,得出了纳晶氧化锌薄膜的电导出现的条件,也给出了制备P型氧化锌材料的条件.当纳晶晶粒达到微晶量级时,带尾态变得连续起来,回归单晶的特点.最后给出大晶粒材料具有导电优势.Derived from the morphology of nanocrystal thin film, we summed up a couple of approximate instructions according to several constitutions of nanocrystalline zinc oxide thin film, which intended to distinguish nanocrystalline film and single crystal film. Using Kronig-Penney model, band tail state distribution of nanocrystal thin film was calculated; a characteristic function was set and distribution graphs for different c/b values were given. Based on the features of these graphs, the doping failure phenomena of nanocrystalline zinc oxide thin films and the conditions under which the film becomes insulator were analyzed further; the conditions for the emergency of film conductance was deduced. The nanocrystal grain size reaches the magnitude of microcrystalline, the band tail state becomes continuous and returns to the single-crystal characteristics. Finally, the conclusion is that the bigger size of grain is of conductance superiority.

关 键 词：纳米薄膜 氧化锌 掺杂失效 

分 类 号：O484.5[理学—固体物理]