XRD研究Fe、C掺杂对He离子注入Al表面晶格畸变的影响  

Effect of Fe and C Doping on the Lattice Distortion of He Ion Implanted Al Surface by XRD

作　　者：向鑫[1] 陈长安[1,2] 蒋春丽[2] 

机构地区：[1]中国工程物理研究院,四川绵阳621900 [2]表面物理与化学国家重点实验室,四川绵阳621907

出　　处：《稀有金属材料与工程》2011年第9期1610-1615,共6页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(50671017)

摘　　要：用离子注入技术实现了Al表面Fe、C元素的掺杂,并用XRD研究Fe、C掺杂对He离子注入Al表面晶格畸变的影响。结果发现,预先掺杂的Fe、C在Al表面的晶格畸变中扮演重要角色,且影响程度与掺杂剂量有关。随着预先掺杂Fe剂量的增大,Al表面晶格畸变量先减小后增加,表明小剂量的Fe掺杂有助于降低He离子注入引起的晶格畸变。C掺杂后能进一步降低预先掺杂Fe引起的晶格畸变,降低程度随C剂量的增加而增加。可见,小剂量的Fe和高剂量的C共掺杂能有效降低He离子注入后Al表面的晶格畸变。Effect of Fe and C doping via ion implantation on the lattice distortion of He ion implanted Al surface was studied by X-ray diffraction （XRD）. The results show that the pre-doped Fe and C play an important part in the lattice distortion of Al surface,and the influence extent depends on the doping fluence. With the increase of the fluence of pre-doped Fe,the lattice distortion of Al surface decreases first and then increases,indicating that Fe doping of small fluence is beneficial for the reduction of lattice distortion of He implanted Al. C doping can further reduce the lattice distortion caused by the earlier Fe doping,and the reduction extent increases with the fluence of doped C increasing. It is concluded that small fluence of Fe and high fluence of C co-doping can effectively reduce the lattice distortion of the He implanted Al surface.

关 键 词：AL XRD Fe、C掺杂 晶格畸变 

分 类 号：TG174.444[金属学及工艺—金属表面处理]