S波段大功率SiC MESFET的设计与工艺制作  

Design and Process of S-Band High Power SiC MESFETs

作　　者：付兴昌[1] 潘宏菽[2] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]专用集成电路重点实验室,石家庄050051

出　　处：《微纳电子技术》2011年第9期558-561,582,共5页Micronanoelectronic Technology

摘　　要：针对SiC功率金属半导体场效应晶体管如何在实现高性能的同时保证器件长期稳定的工作,从金属半导体接触、器件制造过程中的台阶控制、氧化与钝化层的设计及器件背面金属化实现等方面进行了分析;并结合具体工艺,对比给出了部分实验结果。从测试数据看,研制的微波SiC MESFET器件性能由研制初期在S波段瓦级左右的功率输出及较低的功率增益和功率附加效率,达到了在实现大功率输出的条件下,比Si器件高的功率增益和30%以上的功率附加效率,初步体现了SiC MESFET微波功率器件的优势,器件的稳定性也得到了提升,为器件性能和可靠性的进一步提升奠定了设计和工艺基础。To realize the high performance and ensure the long-term stability of the silicon carbide（SiC） power metal semiconductor field effect transistors（MESFETs）,the metal-semiconductor contact,mesa control,oxidation,passivation and backside metallization were analyzed.Some experiment results were given with the comparison of the specific processes.From the test data,in the early development of the microwave SiC MESFET,the output power of S-band is about watt-level,and the power gain and power added efficiency（PAE）are lower,but now its power gain is higher than that of silicon devices and PAE is more than 30%,the superiority of the SiC MESFET microwave power device is showed initially.The device stability is also improved,the design and process are useful for the further improvement of the performance and reliability.

关 键 词：碳化硅(SiC) 金属半导体场效应晶体管(MESFET) 功率 微波 S波段 

分 类 号：TN386.3[电子电信—物理电子学] TN304.24