纳米压印光刻胶  

Nanoimprint Lithography Resist

作　　者：赵彬[1] 张静 周伟民 王金合 刘彦伯 张燕萍 施利毅[1] 张剑平[1] 

机构地区：[1]上海大学理学院化学系,上海200444 [2]上海市纳米科技与产业发展促进中心纳米核心技术实验室,上海200237

出　　处：《微纳电子技术》2011年第9期606-612,共7页Micronanoelectronic Technology

基　　金：上海市科委纳米专项基金(1052nm07500)

摘　　要：光刻胶是纳米压印的关键材料,其性能将影响压印图形复制精度、图形缺陷率和图形向底材转移时刻蚀选择性。提出了成膜性能、硬度黏度、固化速度、界面性质和抗刻蚀能力等压印光刻胶的性能指标。并根据工艺特点和材料成分对光刻胶分类,介绍了热压印光刻胶、紫外压印光刻胶、步进压印式光刻胶和滚动压印式光刻胶的特点以及碳氧类纯有机材料、有机氟材料、有机硅材料做压印光刻胶的优缺点。列举了热压印、紫外压印、步进压印工艺中具有代表性的光刻胶实例,详细分析了其配方中各组分的比例和作用。介绍了可降解光刻胶的原理。展望了压印光刻胶的发展趋势。Resist is a key material for nanoimprint lithography（NIL）.Its property influences the accuracy of transferred patterns,defects rate and etch selectivity of NIL significantly.A suitable resist material is of great importance for successful imprinting.The performance indexes of the imprint lithography photoresist are presented,such as the film-forming property,hardness,viscosity,curing rate,interface property and etching resistance.Different categories of imprint resists sorted by different nanoimprint lithography（such as hot embossing lithography,UV-nanoimprint lithography,step-by-step nanoimprint lithography and roll-to-roll nanoimprint lithography） and main components（such as carbon-oxygen compound,carbon-fluorine compound and carbon-silicon compound） are introduced.The typical examples for the resist in the processes of hot embossing lithography,UV-nanoimprint lithography and step and flash nanoimprint lithography are listed,and the proportion and effect of each component in its prescription are analyzed.The principle of the degradable photoresist is introduced,and the development tendency of the imprint photoresist is prospected.

关 键 词：纳米压印(NIL) 热压印光刻胶 紫外压印光刻胶 氟聚合物 有机硅聚合物 

分 类 号：TN305.7[电子电信—物理电子学]