S波段单电源低噪声放大器的设计与制作  

Design and Fabrication of S-Band Low Noise Amplifiers

作　　者：吴纯杰[1] 董丽元[1] 夏侯海[1] 何明[1] 阎少林[1] 

机构地区：[1]南开大学信息技术科学学院,天津300071

出　　处：《南开大学学报（自然科学版）》2011年第4期31-34,45,共5页Acta Scientiarum Naturalium Universitatis Nankaiensis

基　　金：科技部"863"项目(2009AA032208)

摘　　要：介绍用ATF-34143设计和制作S波段单电源低噪声放大器的方法.针对耗尽型场效应管在单电源设计中电路稳定性出现的问题,提出了在栅极加并联阻抗的方法来提高稳定性,实现了电路全频段稳定.直接采用封装模型进行联合仿真,测试结果和电路仿真结果基本一致.制作的低噪声放大器在2.15～2.35 GHz的频率范围内,功率增益大于20 dB,噪声系数小于0.9 dB,输入和输出驻波比小于1.2.The methods of design and fabrication of S-band low noise amplifiers are introduced. Because of the stability problem of exhausted FET in the single source supply,the method of adding shut impedance at the grid of the transistor is presented to achieve a stable circuit in all frequency bands.For the encapsulation models are directly used for the joint simulation, the measured results are well accordant with the simulated ones.The gain of the fabricated LNA is above 20 dB,the noise figure is below 0.9 dB,and the input and output VSWR are below 1.2.

关 键 词：LNA 单电源 稳定性 ATF-34143 

分 类 号：TN721.2[电子电信—电路与系统]