检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
机构地区:[1]Institute of Material Physics,Key Laboratory of Display Material and Photoelectric Devices,Ministry of Education,Tianjin University of Technology [2]Institute of Material Physics,Key Laboratory of Display Material and Photoelectric Devices,Ministry of Education.Tianjin University of Technology [3]School of Science,Tianjin University of Technology
出 处:《Journal of Semiconductors》2011年第9期46-49,共4页半导体学报(英文版)
基 金:Project supported by the National Natural Science Foundation of China(No.61076065);the Natural Science Foundation of Tianjin, China(No.07JCYBJC12700)
摘 要:We have investigated the properties of C60-based organic field effect transistors(OFETs) with a tris(8- hydroxyquinoline) aluminum(Alq3) buffer layer inserted between the source/drain electrodes and the active material. The electrical characteristics of OFETs are improved with the insertion of Alq3 film.The peak field effect mobility is increased to 1.28×10^(-2) cm^2/(V·s) and the threshold voltage is decreased to 10 V when the thickness of the Alq3 is 10 nm.The reason for the improved performance of the devices is probably due to the prevention of metal atoms diffusing into the C60 active layer and the reduction of the channel resistance in Alq3 films.We have investigated the properties of C60-based organic field effect transistors(OFETs) with a tris(8- hydroxyquinoline) aluminum(Alq3) buffer layer inserted between the source/drain electrodes and the active material. The electrical characteristics of OFETs are improved with the insertion of Alq3 film.The peak field effect mobility is increased to 1.28×10^(-2) cm^2/(V·s) and the threshold voltage is decreased to 10 V when the thickness of the Alq3 is 10 nm.The reason for the improved performance of the devices is probably due to the prevention of metal atoms diffusing into the C60 active layer and the reduction of the channel resistance in Alq3 films.
关 键 词:organic field effect transistors buffer layer C60 ALQ3 channel resistance
分 类 号:TN386[电子电信—物理电子学]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.28