Optimization of Al_2O_3/SiN_x stacked antireflection structures for N-type surface-passivated crystalline silicon solar cells  

作　　者：吴大卫 贾锐 丁武昌 陈晨 武德起 陈伟 李昊峰 岳会会 刘新宇 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2011年第9期58-61,共4页半导体学报（英文版）

基　　金：Project supported by the State Key Development Program for Basic Research of China(Nos.2006CB604904,2009CB939703);the National Natural Science Foundation of China(Nos.60706023,60676001,90401002,90607022);the Chinese Academy of Sciences(No.YZ0635);the Chinese Academy of Solar Energy Action Plan

摘　　要：In the case of N-type solar cells,the anti-reflection property,as one of the important factors to further improve the energy-conversion efficiency,has been optimized using a stacked Al_2O_3/SiN_x layer.The effect of SiN_x layer thickness on the surface reflection property was systematically studied in terms of both experimental and theoretical measurement.In the stacked Al_2O_3/SiN_x layers,results demonstrated that the surface reflection property can be effectively optimized by adding a SiN_x layer,leading to the improvement in the final photovoltaic characteristic of the N-type solar cells.In the case of N-type solar cells,the anti-reflection property,as one of the important factors to further improve the energy-conversion efficiency,has been optimized using a stacked Al_2O_3/SiN_x layer.The effect of SiN_x layer thickness on the surface reflection property was systematically studied in terms of both experimental and theoretical measurement.In the stacked Al_2O_3/SiN_x layers,results demonstrated that the surface reflection property can be effectively optimized by adding a SiN_x layer,leading to the improvement in the final photovoltaic characteristic of the N-type solar cells.

关 键 词：antireflection coatings aluminum oxide silicon nitride simulation solar cells 

分 类 号：TM914.4[电气工程—电力电子与电力传动]