Effect of charge sharing on the single event transient response of CMOS logic gates  

作　　者：段雪岩 王丽云 来金梅 

机构地区：[1]State Key Laboratory of ASIC & System,School of Microelectronics,Fudan University

出　　处：《Journal of Semiconductors》2011年第9期119-124,共6页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.60876015)

摘　　要：This paper presents three new types of pulse quenching mechanism（NMOS-to-PMOS,PMOS-to-NMOS and NMOS-to-NMOS） and verifies them using 3-D TCAD mixed mode simulations at the 90 nm node. The three major contributions of this paper are：（1） with the exception of PMOS-to-PMOS,pulse quenching is also prominent for PMOS-to-NMOS and NMOS-to-NMOS in a 90 nm process.（2） Pulse quenching in general correlates weakly with ion LET,but strongly with incident angle and layout style（i.e.spacing between transistors and n-well contact area）.（3） Compact layout and cascaded inverting stages can be utilized to promote SET pulse quenching in combinatorial circuits.This paper presents three new types of pulse quenching mechanism（NMOS-to-PMOS,PMOS-to-NMOS and NMOS-to-NMOS） and verifies them using 3-D TCAD mixed mode simulations at the 90 nm node. The three major contributions of this paper are：（1） with the exception of PMOS-to-PMOS,pulse quenching is also prominent for PMOS-to-NMOS and NMOS-to-NMOS in a 90 nm process.（2） Pulse quenching in general correlates weakly with ion LET,but strongly with incident angle and layout style（i.e.spacing between transistors and n-well contact area）.（3） Compact layout and cascaded inverting stages can be utilized to promote SET pulse quenching in combinatorial circuits.

关 键 词：single event transient charge sharing pulse quenching 3-D TCAD simulation radiation hardening 

分 类 号：TN432[电子电信—微电子学与固体电子学]