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作 者:陈永杰[1] 黄志[1] 李郎楷[1] 耿秀娟[1] 刘婷婷[1] 谢颖[1] 肖林久[1]
机构地区:[1]沈阳化工大学,辽宁省稀土化学及应用重点实验室,沈阳110142
出 处:《硅酸盐学报》2011年第9期1406-1410,共5页Journal of The Chinese Ceramic Society
基 金:辽宁省教育厅科研项目计划(LS2010120)资助项目
摘 要:采用高温固相法合成单一基质白光Ba1.3Ca0.65-xSiO4:0.02Eu2+,0.03Mn2+,xRe3+(Re=Tb,Er;x=0~0.04)荧光粉,研究荧光粉的发光特性和不同Tb3+、Er3+掺量对荧光粉光谱特性的影响。结果表明:制备的荧光粉在340~415 nm具有较强吸收,适合于InGaN芯片(350~410 nm)激发;发射光谱由425~560 nm蓝绿光波带和560~680 nm的橙红光波带组成,分别归属于Eu2+的5d→4f跃迁发射和Mn2+的4T1→6A1跃迁发射;Tb和Er的掺杂能够有效地提高体系的发光强度,并且Tb掺杂荧光粉的发光强度要高于Er掺杂的;所有样品发光颜色均落在白光区,色温为3 900~5 000 K,显色指数均高于78。Single-phase white light-emitting Ba1.3Ca0.65–xSiO4:0.02Eu2+,0.03 Mn2+,xRe3+(Re = Tb,Er;x = 0–0.04) phosphors were synthesized by high-temperature solid-state reaction.Luminescence properties of the phosphors and influence of various ratios of Re3+ on spectral properties were investigated.Results show that these phosphors can be well excited at 340–415 nm,matching with InGaN-chip(350–410 nm).Emission spectra consist of blue–green light of 425–560 nm and orange-red light of 560–680 nm,attributed to 5d→4f transition of Eu2+ and 4T1→6A1 transition of Mn2+,respectively.Doping of Tb and Er could effectively enhance the luminescence intensity of the system,and the luminescence intensity of Tb-doped phosphor is higher than that of Er-doped.Color emission of all prepared samples is located in white light color areas,color temperature among 3 900–5 000 K,color rendering index above 78.
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