应用于非制冷焦平面器件上的PMN-PT铁电薄膜  

PMN-PT Thin Film for Uncooled Infrared Focal Plane Array Applications

作　　者：李振豪[1] 李琳[2] 普朝光 

机构地区：[1]华南理工大学,广州510006 [2]中山大学,广州510275 [3]昆明北方红外光电子有限公司,昆明650223

出　　处：《硅酸盐学报》2011年第9期1489-1492,共4页Journal of The Chinese Ceramic Society

基　　金：云南省科技计划(2009BC001);昆明市科技计划(昆科计字09G040101号)资助项目

摘　　要：利用射频磁控溅射方法生长掺钛铌镁酸铅-钛酸铅(lead magnesio-niobate titanate,PMN-PT)薄膜,研究PMN-PT薄膜的热处理技术,并测试制备的PMN-PT薄膜样品的晶向结构及电性能。结果表明:PMN-PT薄膜在450℃退火就能完全晶化成钙钛矿结构,其热释电系数达到0.9×10-8 C/(cm2·K),有望解决目前阻碍集成式铁电型非制冷焦平面探测器技术发展的瓶颈问题,即铁电薄膜晶化生长所需的高温与读出电路可承受温度的兼容性问题。lead magnesio–niobate titanate（PMN–PT） ferroelectric thin films were prepared by radio-frequency magnetron sputtering.An annealing procedure for PMN–PT thin films with pre-annealing process was studied.After the annealing procedure was applied,performances of the thin films were investigated.Experimental results show that pre-annealing at 300 ℃ for 5 min followed by an-nealing at 450 ℃ for 5 min are enough for the perovskite formation of PMN–PT films.The test of samples performance with py-roelectric coefficients of 0.9 × 10–8 C/（cm2？K） for PMN–PT thin films indicates that the low annealing procedure might play an im-portant role in the development of monolithic ferroelectric uncooled focal plane arrays.

关 键 词：铌镁酸铅-钛酸铅 热处理 X射线衍射 热释电系数 

分 类 号：TN304[电子电信—物理电子学]