S波配对的超导石墨烯/石墨烯/超导石墨烯结中的近邻效应  

Proximity Effect in a S-wave Pairing Superconducting Graphene /Graphene/Superconducting Graphene Junction

作　　者：秦志杰[1] 李钊[1] 

机构地区：[1]郑州大学物理工程学院,郑州450001

出　　处：《中原工学院学报》2011年第4期1-5,61,共6页Journal of Zhongyuan University of Technology

基　　金：国家自然科学基金项目(10874154);国家人力资源和社会保障部留学回国人员科技活动择优资助项目

摘　　要：基于BCS理论,在紧束缚近似下,利用Bogoliubov-de Gennes(BdG)方程,通过自洽计算,研究了具有S波配对的超导石墨烯/石墨烯/超导石墨烯结中的近邻效应.针对在超导部分和正常导体部分的费米能级匹配和不匹配两种情况,讨论了化学势对体系的局域态密度以及配对振幅的影响.研究表明,GSNS结构的近邻效应依赖于超导部分和正常部分的化学势匹配情况.On the basis of self-consistent calculation of the Bogoliubov-de-Gennes equations, gate proximity effect on a superconducting graphene with S-wave pairing /graphene /superconducting grapheme junction structure is investigated. The dependence of the local density of states and pairing amplitude on the chemical potential are calculated for both the Fermi-level match case and Fermi-level mismatch case. The relation between the results and electronic structure is also discussed. Our research shows that the proximity effects in GSNS Junction depend much on the relation of chemical potentials in superconducting parts and in the normal part.

关 键 词：石墨烯 超导 近邻效应 

分 类 号：O511[理学—低温物理]