GaN光电阴极激活后的光谱响应分析  

The Spectral Response Analysis of Activated GaN Photocathode

作　　者：王晓晖[1] 常本康[1] 张益军[1] 侯瑞丽[1] 熊雅娟[1] 

机构地区：[1]南京理工大学电子工程与光电技术学院,江苏南京210094

出　　处：《光谱学与光谱分析》2011年第10期2655-2658,共4页Spectroscopy and Spectral Analysis

基　　金：国家自然科学基金项目(60871012)资助

摘　　要：由于GaN光电阴极的突出性能，其在紫外探测方面有着广泛的应用。文章在超高真空激活系统中，对GaN样品进行了Cs／O激活实验，并分析了激活后反射式的量子效率：在240－350nm的紫外波段内，量子效率约在30％～10％之间，曲线较为平坦，在240rim处达到30％的最大值，与国外结果对比后发现，本文获得的GaN光电阴极量子效率在短波段尚有不足。研究了GaN（0001）表面的原子排列，利用3D模拟了表面原子排列模型，并推测了Cs在其表面的吸附情况。CaN photocathode has a wide applicaion in ultraviolet detection because of the outstanding performance. GaN photocathode was activated in ultrahigh vacuum （UHV） system by Cs/O, and the reflection-mode quantum efficiency （QE） was ana lyzed. The QE is 30%-10% corresponding to the wavelength 240-350 nm , and the QE curve is flat. The QE reaches the maximum of 30% at 240 nm. Compared with the abroad result, the QE obtained by us is still inadequate at the short wave length. The atom arrangement of GaN （0001） was studied. The atom arrangement on the surface was simulated by 3D, and in this way the adsorption of Cs on the GaN（0001） was speculated.

关 键 词：GAN光电阴极 量子效率 表面原子排列 

分 类 号：TN23[电子电信—物理电子学]