IGBT关断瞬态过压击穿特性研究  

Study on Over-voltage Breakdown Characteristic of IGBT for Turn-off Transient

作　　者：汪波[1] 胡安[1] 唐勇[1] 陈明[1] 

机构地区：[1]海军工程大学,舰船综合电力技术国防科技重点实验室,湖北武汉430033

出　　处：《电力电子技术》2011年第9期32-34,共3页Power Electronics

基　　金：国家自然科学基金重点项目(50737004);国家自然科学基金委员会创新研究群体科学基金(50721063)~~

摘　　要：绝缘栅双极型晶体管(IGBT)过压击穿是一种常见的失效方式,由于线路和器件内部分布杂散电感,关断瞬态时会产生过大的电压尖峰从而引起过压击穿,通常误认为一旦发生过压击穿IGBT就会发生破坏性失效。针对此问题,基于IGBT结构和PN结雪崩电压击穿特性,从理论和实验出发研究了IGBT发生过压击穿时的工作特性和失效机理,说明了过压击穿引起的失效本质仍然是结温过高的热失效,最后通过实验证明IGBT可承受短时过压击穿。Over-voltage breakdown is one of the common failure mechanisms to insulated gate bipolar transistor（IGBT）.As distributing induction present in circuit and device,a high inducted peak voltage in transient turn-off brings over-voltage break-down.Aimed to generally fault ideal that IGBT will be devastating failure once exceeding breakdown voltage,this paper studies theoretically and experimentally work characteristic and failure mechanism of IGBT illumi-nates that the essence in over-voltage breakdown failure is also thermal failure caused by over junction temperature.The ability of IGBT enduring short time over-voltage breakdown is validated by experiment.

关 键 词：绝缘栅双极型晶体管 电压击穿 热失效 

分 类 号：TM32[电气工程—电机]