一种新型腐蚀剂--醋酸钠溶液对单晶硅太阳电池表面织构化的作用  

A New Etchant-Effect of Sodium Acetate on Surface Texture of Crystalline Silicon Wafer for Solar Cells

作　　者：王立娟[1] 周炳卿[1] 那日苏[1] 金志欣[1] 

机构地区：[1]内蒙古师范大学物理与电子信息学院,功能材料物理与化学内蒙古自治区重点实验室,呼和浩特010022

出　　处：《材料导报》2011年第18期70-72,77,共4页Materials Reports

基　　金：国家自然科学基金(50662003);内蒙古自然科学基金(2009MS0806)

摘　　要：对晶向为(100)的p型单晶硅片进行表面刻蚀,制作减反射绒面。选用了一种新型的腐蚀剂,即醋酸钠(CH3COONa)溶液,用来腐蚀单晶硅太阳电池。通过分别改变醋酸钠溶液的浓度、温度以及腐蚀时间对硅片表面进行腐蚀发现,经醋酸钠溶液腐蚀后在硅片表面形成腐蚀坑大小适中、分布均匀的绒面结构。在醋酸钠溶液的质量分数为20%、温度为95℃、时间为40min的条件下腐蚀单晶硅片,在波长为700～1000nm之间获得较低的平均表面反射率,且最佳平均反射率为12.14%。从实验结果和成本因素考虑,这种腐蚀剂的成本很低,不易污染环境且重复性好,有利于大规模工业化制绒。The surface of p-type（100） oriented crystalline silicon wafer were etched to reduce the surface rettectance. A new type of etchant（sodium acetate（CH3 COONa） solution） was used to etch the surface of single crystal wafer silicon for solar ceils. Changing the temperature, the corrosion time and the concentrations of sodium acetate solution crystalline silicon wafer was etched, respectively. The results show that it can form the good surface morphology by etching crystalline silicon wafer with sodium acetate solution, and the best surface morphology with a sufficient low average refleetivity of 12. 14 % is obtained between 700rim and 1000nm, when adding 20wt% sodium acetate solution at 95℃ for 40min. Considering experimental results and cost, this etchant has its great advantage, such as low cost, less pollution and good reproducibility. Therefore, it is suitable for the large-scale industrial etching for solar cells.

关 键 词：单晶硅 表面形貌 织构 醋酸钠 

分 类 号：TK514[动力工程及工程热物理—热能工程]