纳秒级强激光对多晶硅片光吸收性能的影响  

Impact of ns high power laser on the absorbency of polycrystalline silicon wafer used for solar cell

作　　者：许德富[1] 尹少全[1] 邓迟[1] 肖志刚[1] 肖啸[1] 李育德[2] 

机构地区：[1]乐山师范学院硅材料研究所,四川乐山614004 [2]四川大学电子信息学院,四川成都610064

出　　处：《激光与红外》2011年第9期979-982,共4页Laser & Infrared

基　　金：乐山师范学院科研课题;四川省教育厅科研基金课题(No.10ZC108)资助

摘　　要：采用兆瓦级TEA CO2激光器输出的纳秒级强红外激光脉冲照射太阳能多晶硅片,用红外光谱仪测试了硅片的吸收谱,发现经激光脉冲照射后的太阳能多晶硅片对光的吸收能力大为增强,并对实验结果做出了初步的分析。In this paper,polycrystalline silicon wafers for soalr cell are irradiated by high power infrared laser pulse which is produced by TEA CO2 laser.The pulse duration is shorter than a microsecond,so it is named ns laser pulse.Then we use infrared spectrograph to get the absorption spectrum of the silicon wafers irradiated by ns infrared laser pulse and find that its absorbency is greatly increased.The experimental results are explained with theory at last.

关 键 词：红外激光脉冲 太阳能多晶硅片 吸收性能 实验研究 

分 类 号：TN248.22[电子电信—物理电子学] TN249