Ce∶LSO多晶薄膜的溶胶-凝胶法制备及其发光性能  

Sol-gel Synthesis and Luminescence Properties of Ce∶LSO Polycrystalline Films

作　　者：沈思情[1] 许志斌[1] 马清[1] 谢建军[1] 施鹰[1] 袁晖[2] 熊巍[2] 

机构地区：[1]上海大学材料科学与工程学院电子信息材料系,上海200072 [2]中国科学院上海硅酸盐研究所,上海200050

出　　处：《发光学报》2011年第9期880-884,共5页Chinese Journal of Luminescence

基　　金：上海市自然科学基金(10ZR1411400);上海科委基础研究重点项目(9JC1406500);上海市重点学科(S30107);上海大学2011年度研究生创新基金(A16-0110-11-017)资助项目

摘　　要：采用Pechini溶胶-凝胶法结合旋涂工艺在单晶硅(111)上制备了Ce3+离子掺杂的硅酸镥(Lu2SiO5)薄膜,利用热重差热分析(TG-DSC)、X射线衍射(XRD)、扫描电镜(SEM)、真空紫外光谱(VUV)及椭偏(SE)测试对Ce∶Lu2SiO5薄膜的物相、形貌、发光性质和光学常数进行了表征。结果表明:薄膜样品从900℃开始晶化,1 100℃时晶化完全。薄膜表面均匀、平整、无裂纹。真空紫外激发光谱中存在较强的基质发射,发射光谱是一个350～500 nm的宽带谱,宽带中心在400 nm左右。折射率、消光系数分别为1.82～1.94和0.005～0.05,厚度与SEM测试结果相一致。Ce3＋-doped lutetium oxyorthosilicate（Ce∶Lu2SiO5） films have been fabricated on silicon（111） substrates by Pechini sol-gel method combined with the spin-coating technique.Thermogravimetry-differential scanning calorimetry（TG-DSC） analysis,X-ray diffraction（XRD）,Scanning Electron Microscopy（SEM）,PL（Photoluminescent） measurements under VUV as well as spectroscopic ellipsometry（SE） were used to characterize the resulting films.The results indicate that the Ce∶Lu2SiO5 films begin to crystallize at 900 ℃ and are completely crystallized at 1 100 ℃.The phosphor films are uniform,dense and crack-free.The VUV spectra show that the excitation is mainly host excited and the emission spectrum is a broad band centered at about 400 nm.The refractive index,the extinction of coefficient are 1.82～1.94 and 0.005～0.05,respectively,the thickness measured by spectroscopic ellipsometry is similar to that obtained by SEM.

关 键 词：溶胶-凝胶法 Ce∶LSO薄膜 发光 真空紫外光谱 光学常数 

分 类 号：O484.4[理学—固体物理]