PrF_3阳极缓冲层对OLED器件性能的影响  

Effect of PrF_3 Anode Buffer Layer on The Performance of OLED

作　　者：廖亚琴[1,2] 陈红[1] 刘星元[1] 

机构地区：[1]中国科学院激发态物理重点实验室长春光学精密机械与物理研究所,吉林长春130033 [2]中国科学院研究生院,北京100039

出　　处：《发光学报》2011年第9期929-933,共5页Chinese Journal of Luminescence

基　　金：吉林省科技发展计划项目(20090346;20100570)资助

摘　　要：使用真空热蒸镀法制备的OLED器件,利用不同厚度的PrF3作阳极缓冲层,并和未加缓冲层的器件进行了对比。实验结果表明:0.5 nm厚的PrF3阳极缓冲层可以有效增强OLED器件的空穴注入能力,增强电子和空穴的浓度平衡,优化器件的电致发光特性。器件的最大电流效率为4.9 cd/A,最大亮度为33 600 cd/m2,分别是未加入缓冲层的常规器件(3.7 cd/A,最大亮度为12 230 cd/m2)的1.3倍和2.75倍。A high efficiency organic light emitting device（OLED） was fabricated by a facile way based on an ultra thin praseodymium fluoride（PrF3） as the anode buffer layer.The PrF3 anode buffer layer device shows some dramatic properties such as higher hole injection,stable and high current efficiency,and much higher luminance compared with those of the traditional ITO anode device.The 0.5 nm PrF3 anode buffer layer device gives the maximum current efficiency and luminance of 4.9 cd/A and 33 600 cd/m2,respectively,comparing with the traditional ITO anode device of 3.7 cd/A and 12 320 cd/m2.The reason of the optimized device was also discussed.

关 键 词：有机电致发光器件 PrF3 空穴缓冲层 功函数 

分 类 号：TN383.1[电子电信—物理电子学]