ZnSe和Cr∶ZnSe单晶的温梯法制备及光学性能研究  

Preparation and Optical Properties of ZnSe and Cr∶ZnSe Single Crystal Grown by Temperature Gradient Technique

作　　者：张浩[1] 李琳[1] 宋平新[1] 张迎九[1] 冷雨欣[2] 许毅[2] 董永军[2] 

机构地区：[1]郑州大学物理工程学院,郑州450052 [2]中国科学院上海光学精密机械研究所强场激光物理国家重点实验室,上海201800

出　　处：《人工晶体学报》2011年第4期848-852,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.60708021);上海基础研究重点项目(No.09JC1414900);上海光技术专项(No.09DZ1142000);上海光技术专项(No.10DZ1140400)

摘　　要：采用温度梯度法(TGT)生长了直径为32 mm大尺寸ZnSe晶体。对生长出的ZnSe单晶进行了光学性能分析。采用磁控溅射方法在ZnSe晶体上镀铬膜,通过热扩散方法成功制备出中红外Cr∶ZnSe激光晶体,并研究了Cr∶ZnSe晶体的光谱性能。吸收光谱测试观察到了Cr2+(3d4)取代四面体配位Zn2+的5T2→5E能级的跃迁在1800nm的吸收带。77 K低温的光致发光光谱表明Cr∶ZnSe晶体具有中心波长位于2.2μm的宽谱带发射特征。Large sized high quality ZnSe crystal was grown by the temperature gradient technique（TGT） method.The optical property of the as-grown ZnSe crystal was studied.Chromium films were deposited on the surface of ZnSe crystal by magnetron sputtering method,the mid-infrared Cr∶ZnSe laser crystals were prepared by the thermal diffusion method.The spectral properties of Cr∶ZnSe were investigated.The absorption spectra of Cr∶ZnSe shows a strong broad absorption band with a peak at about 1800 nm is attributed to the 5T2→5E transition of the Cr2＋（3d4）substituted for the Zn2＋ in the tetrahedral site.PL spectra measured at 77 K of Cr∶ZnSe crystal shows broad band emission around centre wavelength at 2.2 μm.

关 键 词：ZNSE Cr∶ZnSe 温度梯度法(TGT) 中红外 

分 类 号：O782[理学—晶体学]