热丝CVD法制备a-Si_(1-x)C_x薄膜的光电性能研究  

Investigation on Photoelectrical Properties of a-Si_(1-x)C_x Films Deposited by Hot-wire CVD

作　　者：程彬[1] 沈鸿烈[1] 吴天如[1] 丁滔[1] 肖少文[1] 陆婷[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,南京211100

出　　处：《人工晶体学报》2011年第4期882-886,共5页Journal of Synthetic Crystals

基　　金：国家高技术研究发展计划(863)(2006AA03Z219)资助项目;江苏高校优势学科建设工程资助项目;国家大学生创新性实验计划资助项目(101028724)

摘　　要：本文以硅烷、乙炔和氢气为气源,采用热丝CVD法制备了非晶碳化硅薄膜。通过FITR、紫外-可见光分光光度计、四探针仪、台阶仪和霍尔效应测试仪对薄膜的光学和电学性能进行了系统的研究。结果表明,随着乙炔气体流量的增加,薄膜中碳含量和薄膜光学带隙呈现逐渐递增的趋势,其中光学带隙由1.7 eV上升到2.1 eV。同时还发现B掺杂薄膜的空穴浓度随着B2H6与硅烷流量比的增大而显著增大,而霍尔迁移率的变化趋势则与空穴浓度的变化趋势相反,与二者对应的总体效果是薄膜的电阻率首先显著下降,然后缓慢下降至最小值1.94Ω.cm,此后电阻率略有上升。Amorphous Si1-xCx（a-Si1-xCx） thin films were deposited from a silane（SiH4）,acetylene（C2H2） and hydrogen（H2） gas mixture by hot wire chemical vapor deposition（HWCVD） technique.The photoelectrical properties of the a-Si1-xCx thin films were systematically studied by FTIR,UV-VIS spectra-photometer,four-point probes,surface profile measuring system and Hall-effect measurement equipment.The results indicated that as the C2H2 flow rate increasing,the carbon content and the optical band gap of p-a-Si1-xCx thin films had the tendency to rise,where the band gap increased from 1.7 eV to 2.1 eV.Besides,the hole concentration of the B doped a-Si1-xCx thin films increased significantly as the flow rate ratio of B2H6 to SiH4 increasing,whereas the hall mobility of the film showed a contrary variation tendency.As a comprehensive result,the resistivity of the p-a-Si1-xCx thin films decreased rapidly at first,then gradually reached a minimal value of 1.94 Ω·cm and finally went upward slightly.

关 键 词：热丝CVD 非晶碳化硅 光电性能 

分 类 号：O484[理学—固体物理]