Mg掺杂对ZnO薄膜结构与磁性的影响  

Structure and Magnetic Properties of Mg Doped ZnO Thin Films

作　　者：黄文娟[1] 方庆清[1] 王伟娜[1] 吴克跃[1] 张瀚铭[1] 张启平[1] 

机构地区：[1]安徽大学物理与材料科学学院,合肥230039

出　　处：《人工晶体学报》2011年第4期898-902,共5页Journal of Synthetic Crystals

基　　金：安徽省自然科学基金(090414177)

摘　　要：采用脉冲激光沉积(PLD)方法在单晶Si(100)衬底上制备Zn1-xMgxO薄膜,研究了退火温度和氧压对Zn1-xMgxO薄膜的结构和磁性的影响。结果表明,Mg掺入量影响ZnO结构相变,当x≥0.25时,Zn1-xMgxO薄膜由六角纤锌矿结构变为立方结构,同时磁性增强。随着氧压的增大和后续退火温度的升高,都会使饱和磁化强度(MS)呈先增大后减小的趋势。分析表明磁性的变化都与样品中的表面缺陷浓度有关。Zn1-xMgxO（x=0.075,0.25,0.15,0.35,0.65） thin films were doposited by pulsed laser deposition（PLD） on Si（100） substrate.The influence of annealing temperature and oxygen pressure on the structure and magnetic properties of Zn1-xMgxO was investigated.The results of X-ray diffraction（XRD） revealed that the Mg content would affect the structure of Zn1-xMgxO thin films.The structure of Zn1-xMgxO thin films changed from hexagonal wurtzite structure to cubic structure and the magnetism of films enhanced as x≥0.25.The saturation magnetism（Ms） increased firstly,then decreased with the increase of oxygen pressure and annealing temperature.The analytical results indicated that the variations of magnetic properties are all concerned with the defect concentration around the surface of films.

关 键 词：Mg掺杂ZnO薄膜 室温铁磁性 表面缺陷 

分 类 号：O737[理学—晶体学]