CaCu_3Ti_4O_(12)-xMg_2TiO_4陶瓷的介电性能  

Dielectric properties of Mg_2TiO_4 doped CaCu_3Ti_4O_(12) composite ceramics

作　　者：杨锋莉[1] 吴俊林[1] 闫妍[1] 刘鹏[1] 

机构地区：[1]陕西师范大学物理与信息技术学院,陕西西安710062

出　　处：《陕西师范大学学报（自然科学版）》2011年第5期23-26,30,共5页Journal of Shaanxi Normal University：Natural Science Edition

基　　金：国家自然科学基金资助项目(50872078)

摘　　要：采用传统陶瓷烧结方法,制备了CaCu3Ti4O12（CCTO）-xMg2TiO4（x=0,0.2,0.4,0.6）陶瓷样品.利用X射线衍射仪和扫描电镜,分别确定了样品的物性和形貌,并用阻抗分析仪测定了不同频率和温度下材料的介电常数和介电损耗,进而研究Mg2TiO4对CCTO材料微观结构和介电性能的影响.结果表明：添加Mg2TiO4可促进CCTO晶界处小晶粒生长,抑制大晶粒生长,增强晶界的绝缘性,使低频介电弛豫行为明显减弱,降低CCTO陶瓷样品低频范围的介电损耗.当x=0.2时,在50~150 Hz频率范围内,tanδ均在0.05附近.该实验结果为优化CCTO材料性能、推进其在电容器方面的应用提供了实验依据.The CaCu3Ti4O12-xMg2TiO4（x=0,0.2,0.4,0.6） ceramics is prepared by the solid-state reaction.The phase structure of CaCu3Ti4O12 ceramics is measured by the X-ray diffraction and the morphology of CaCu3Ti4O12 ceramics is observed by the scanning electron microscopy.The dielectric properties of CaCu3Ti4O12 composite ceramics doped with Mg2TiO4 are tested by the impedance analyzer.The result indicate that Mg2TiO4 doping improve the growth of small grain and prevent that of the large grain at grain boundary.Meanwhile,the lower frequency is weakened and the dielectric loss at lower frequency is decreased obviously.At x=0.2,the is around 0.05 in the range of 50～150 Hz.This study is beneficial to design CCTO-based materials and promote their application such as in capacitors.

关 键 词：CaCu3Ti4O12(CCTO) 巨介电常数 电流-电压非线性 

分 类 号：O487[理学—固体物理]