退火对Ce:YVO_4晶体光谱性能影响  

Effect of Annealing Treatments on Spectral Properties of Ce:YVO_4 Crystals

作　　者：张守超[1] 阮永丰[2] 王友发[2] 吴周礼[2] 王帅[2] 贾国治[1] 

机构地区：[1]天津城市建设学院基础部,天津300384 [2]天津大学理学院物理系,天津300072

出　　处：《中国稀土学报》2011年第5期582-588,共7页Journal of the Chinese Society of Rare Earths

基　　金：天津自然科学基金资助项目(09JCYBJC04100)

摘　　要：采用中频感应提拉法生长了高质量的掺铈钒酸钇(Ce:YVO4)晶体,其中Ce3+离子的浓度为1.0%(原子分数)。对于加工好的晶体薄片分别在中性气氛Ar和还原性气氛H2中不同温度下进行了退火处理。对退火后的样品进行了吸收光谱和荧光光谱的测量。中性Ar中退火对晶体发光效率提高没有作用,H2退火后晶体吸收谱发生显著变化,晶体的发光效率大幅提高。发射光谱中400～600 nm的发射带包含两个发射峰,其中心波长分别在424和469 nm处。并对掺铈钒酸钇晶体作为白光材料的可能性进行了分析。The 1.0% Ce3＋ doped YVO4 single crystal was grown by the Czochralski method under mid-fre- quency induction heating in the protective atmosphere. The Ce：YVQ wafer were annealed in Ar and H2 at different annealing temperatures. The absorption and fluorescence spectra of the processed samples were measured. The results showed that annealing in Ar did not increase the luminous efficiency, however, annealing in H2 prompted a substantial increase in luminous efficiency. The center wavelength of the emission band ranged 400 - 600 nm was 424 and 469 nm, respectively. The luminescence strong blue-green-yellow spectra indicated that a light emission might be caused by a blue light excitation. The possibility of Ce：YVO4 crystals as emitting white light materials was analyzed.

关 键 词：Ce:YVO4 退火 荧光光谱 白光 发光效率 稀土 

分 类 号：O734.3[理学—晶体学]