一种考虑IGBT基区载流子注入条件的物理模型  

A physics-based model of insulated gate bipolar transistor with all free-carrier injection conditions in base region

作　　者：杜明星[1] 魏克新[2] 

机构地区：[1]天津大学电气与自动化工程学院,天津300072 [2]天津理工大学天津市复杂系统控制理论及应用重点实验室,天津300384

出　　处：《物理学报》2011年第10期722-727,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:50977063);国家高技术研究发展计划(批准号:2008AA11A145);天津市科技支撑计划重点项目(批准号:09ZCKFGX01800)资助的课题~~

摘　　要：提出了一种考虑绝缘栅极双极晶体管(insulated gate bipolar transistor,IGBT)基区载流子不同注入条件的物理模型.在小注入和大注入情况下,分别建立描述IGBT基区载流子运动的输运方程(ambipolar transport equation,ATE),并确定边界条件.采用傅里叶级数法求解载流子输运方程,并将计算结果分别与IGBT手册提供的实验数据和Hefner模型计算结果相比较,验证了本文提出物理模型的正确性.A physics-based model of insulated gate bipolar transistor（IGBT） with all free-carrier injection conditions in a base region is presented,from which the ambipolar transport equations（ATEs） in high-level injection and low-level injection are deduced separately.Moreover,the boundary conditions of ATE are determined.In a more compact solution a Fourier-series solution for the ATE is used in this paper.Simulation and experimental results given by manufacturers are presented and compared with each other to validate the modeling approach.Physics-based IGBT model is used which is proved accurate.

关 键 词：绝缘栅极双极晶体管 物理模型 注入条件 双极输运方程 

分 类 号：TN386.2[电子电信—物理电子学]