TiN镀层对真空系统释气率的影响概述  

Review of the effects of TiN coatings on the outgassing rate of vacuum systems

作　　者：焦晓静[1] 韩锋[1] 苏党帅[1] 

机构地区：[1]西北核技术研究所,陕西西安710024

出　　处：《真空》2011年第5期86-90,共5页Vacuum

摘　　要：抑制射频真空系统表面二次电子倍增的一种常用方法是在系统内表面镀TiN薄膜,因为TiN薄膜具有较低的二次电子发射率。但对于真空应用来说,必须关注TiN薄膜的真空释气率问题。本文综述了国内外在TiN镀层真空特性方面的研究现状,其中涉及TiN镀层低释气率的物理机制、产生低释气率TiN薄膜的最优化镀膜条件以及两种常用镀膜方法的比较。One of the general methods to suppress nmhipactor of vacuum systems is to coat TiN film on the inner suffac tor its low secondary electron emission coefficients. But at the same time, the outgassing rate of TiN film in vacuum has to be paid attention to. This paper reviews the investigations on the vacuum characteristics of TiN film by researchers at home and abroad, including the physical mechanisms behind the low outgassing rate of TiN film in vacuum, the optimum process parameters for preparing TiN film with low outgassing rate, and the comparison between two typical coating technologies.

关 键 词：氮化钛 二次电子倍增 真空特性 释气率 涂层 

分 类 号：TB43[一般工业技术] TB742