A novel double-trench LVTSCR used in the ESD protection of a RFIC  

作　　者：李立 刘红侠 

机构地区：[1]Key Laboratory of the Ministry of Education for Wide Band Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University

出　　处：《Journal of Semiconductors》2011年第10期53-57,共5页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.60976068,61076097);the National Defense Foundation of China(No.413080401)

摘　　要：A low-voltage triggering silicon-controlled rectifier（LVTSCR）,for its high efficiency and low parasitic parameters,has many advantages in ESD protection,especially in ultra-deep sub-micron（UDSM） IC and high frequency applications.In this paper,the impact factors of the snapback characteristics of a LVTSCR and the configuring modes are analyzed and evaluated in detail.These parameters include anode series resistance,gate voltage,structure and size of devices.In addition,a double-trench LVTSCR is presented that can increase the hold-on voltage effectively and offers easy adjustment.Also,its snapback characteristics can obey the ESD design window rule very well.The strategy of ESD protection in a RFIC using a LVTSCR is discussed at the end of the paper.A low-voltage triggering silicon-controlled rectifier（LVTSCR）,for its high efficiency and low parasitic parameters,has many advantages in ESD protection,especially in ultra-deep sub-micron（UDSM） IC and high frequency applications.In this paper,the impact factors of the snapback characteristics of a LVTSCR and the configuring modes are analyzed and evaluated in detail.These parameters include anode series resistance,gate voltage,structure and size of devices.In addition,a double-trench LVTSCR is presented that can increase the hold-on voltage effectively and offers easy adjustment.Also,its snapback characteristics can obey the ESD design window rule very well.The strategy of ESD protection in a RFIC using a LVTSCR is discussed at the end of the paper.

关 键 词：UDSM LVTSCR RFIC ESD design window 

分 类 号：TN349[电子电信—物理电子学]