一个非晶硅薄膜太阳能电池制备用激光刻线系统  

Laser scribing system for a-Si thin film solar cell preparation

作　　者：肖光辉 覃海 蓝劾 叶健 杨明生 潘龙法[2] 

机构地区：[1]东莞宏威数码机械有限公司研发中心,广东东莞523018 [2]清华大学机械工程学院精密仪器与机械学系光盘国家工程研究中心,北京100084

出　　处：《应用光学》2011年第5期1016-1021,共6页Journal of Applied Optics

基　　金：广东省重点产业技术创新共建项目(200872206)

摘　　要：非晶硅薄膜太阳能电池制备过程中的激光刻线工艺要求刻线宽度在30μm～50μm之间,死区范围小于300μm,刻线深度符合工艺要求。这不仅要求激光器具有较高的光束质量,而且要求光学系统具有较高的成像质量和较宽的焦深。设计了单激光器四分光路的激光刻线系统。采用设计的激光刻线装置,在1 400mm×1 100mm×3.2mm玻璃基板上进行刻线试验,分别得到刻线P1,P2,P3的线宽为35μm,50μm和45μm,死区范围(P1至P3的距离)为287μm,最终深度分别为0.98μm,0.24μm和0.58μm,刻线宽度和深度均符合薄膜太阳能电池制备工艺要求。The laser scribing process for a-Si（amorphous silicon） thin film solar cell preparation requires the line width of 30 μm～50 μm,the dead zone of less than 300 μm in size,and the compliance of line depth with the process requirements.Thus,the high beam quality of the laser is required,as well as the high imaging quality and wide focal depth of the optical system.A laser scribing system with a single laser and four-way light splitters was designed.With the designed laser scriber,a laser scribing test was done on a 1 400 mm×1 100 mm×3.2 mm glass substrate.The widths of the scribing lines P1,P2 and P3 were 35 μm,50 μm and 45 μm,respectively,the dead zone（distance between P1 and P3） was 287 μm,and their final depths were 0.98 μm,0.24 μm and 0.58 μm respectively.The results show that the widths and depths of the scribing lines meet the requirements of thin film solar cell preparation process.

关 键 词：激光刻线系统 非晶硅薄膜太阳能电池 刻线 

分 类 号：TN249[电子电信—物理电子学] TM914.4[电气工程—电力电子与电力传动]