Enhanced etching of silicon didioxide guided by carbon nanotubes in HF solution  

作　　者：赵华波 应轶群 严峰 魏芹芹 傅云义 张岩 李彦 魏子钧 张朝晖 

机构地区：[1]State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University [2]Department of Microelectronics, Peking University [3]Key Laboratory for Physics and Chemistry of Nanodevices, College of Chemistry and Molecular Engineering, Peking University

出　　处：《Chinese Physics B》2011年第10期442-446,共5页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 90406007, 61076069, 60776053, and 10434010);the National Basic Research Program of China (Grant No. 2007CB936800)

摘　　要：This paper describes a new method to create nanoscale SiO2 pits or channels using single-walled carbon nanotubes （SWNTs） in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a pattern of nanoscale SiO2 channels can be prepared. The nanoscale SiO2 patterns can also be created on the surface of three- dimensional （3D） SiO2 substrate and even the nanoscale trenches can be constructed with arbitrary shapes. A possible mechanism for this enhanced etching of SiO2 has been qualitatively analysed using defects in SWNTs, combined with H3O＋ electric double layers around SWNTs in an HF solution.This paper describes a new method to create nanoscale SiO2 pits or channels using single-walled carbon nanotubes （SWNTs） in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a pattern of nanoscale SiO2 channels can be prepared. The nanoscale SiO2 patterns can also be created on the surface of three- dimensional （3D） SiO2 substrate and even the nanoscale trenches can be constructed with arbitrary shapes. A possible mechanism for this enhanced etching of SiO2 has been qualitatively analysed using defects in SWNTs, combined with H3O＋ electric double layers around SWNTs in an HF solution.

关 键 词：carbon nanotube silicon dioxide HF wet etching defects and electric double layers 

分 类 号：TN305.7[电子电信—物理电子学]