Improved charge trapping flash device with Al_2O_3 /HfSiO stack as blocking layer  

作　　者：郑志威 霍宗亮 朱晨昕 许中广 刘璟 刘明 

机构地区：[1]Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences

出　　处：《Chinese Physics B》2011年第10期476-479,共4页中国物理B（英文版）

基　　金：supported partially by the National Basic Research Program of China (Grant No. 2010CB934204);the National Natural Science Foundation of China (Grant No. 60825403);the Director’s Fund of Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS);the National Science and Technology Major Project of China (Grant No. 2009ZX02023-005)

摘　　要：In this paper, we investigate an Al2O3/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon- type （MONOS） memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al2O3/HfO2 stack as the blocking layer, the sample with the Al2O3/HfSiO stack as the blocking layer shows high program/erase （P/E） speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al2O3/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications.In this paper, we investigate an Al2O3/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon- type （MONOS） memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al2O3/HfO2 stack as the blocking layer, the sample with the Al2O3/HfSiO stack as the blocking layer shows high program/erase （P/E） speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al2O3/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications.

关 键 词：charge trapping flash blocking layer STACK 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]