超陷光黑硅结构研究  

Design of Black Silicon with Ultra-Light-Trapping Structure

作　　者：钱超峰[1] 王庆康[1] 李海华[1] 

机构地区：[1]上海交通大学微纳科学技术研究院薄膜与微细技术教育部重点实验室微米/纳米加工技术国家级重点实验室,上海200240

出　　处：《光学学报》2011年第10期53-57,共5页Acta Optica Sinica

基　　金：国家863计划(2011AA050518);国家973计划(2010CB933702);上海市科学技术委员会纳米专项项目(0952nm06400)资助课题

摘　　要：研究了超陷光黑硅表面圆锥阵列结构的设计。将圆锥结构分为五层,利用等效媒质理论进行了参数设计。考虑了硅材料折射率随波长的变化,用严格耦合波理论对不同入射角,圆锥阵列结构高度以及占空比时的反射率进行了计算分析。发现,圆锥阵列超陷光结构的周期为135nm,高度为480nm时,在0°～60°入射角范围内,对波长为300～1200nm的入射光的反射率都小于5%。The conical array on the surface of ultra-light-trapping black silicon,which is divided into five layers,is designed using the equivalent medium theory.It′s considered that the refractive index of silicon varying with the wavelength.The elements which affect the reflectivity are analyzed systematically using the rigorous coupled-wave theory,such as incident angle,the height of the conical array and the duty factor.According to the simulation,the reflectivity is always less than 5% when the incident wavelength is from 300 to 1200 nm and the incident angle is from 0° to 60° with the conical array′s period of 135 nm and its height of 480 nm.

关 键 词：衍射 黑硅 等效媒质理论 超陷光 圆锥阵列结构 

分 类 号：O436[机械工程—光学工程]