应用于对等速率10G-EPON的10Gbit/s突发模式激光驱动器设计  

10Gbit/s burst-mode laser diode driver for symmetric-rate 10G-EPON applications

作　　者：林叶[1] 王健[2] 朱恩[1] 顾皋蔚[1] 刘文松[1] 

机构地区：[1]东南大学射频与光电集成电路研究所,南京210096 [2]中国科学院自动化研究所,北京100190

出　　处：《东南大学学报（自然科学版）》2011年第5期911-916,共6页Journal of Southeast University：Natural Science Edition

基　　金：江苏省科技支撑计划重点资助项目(BE2008128);高等学校博士学科点专项科研基金资助项目(20090092120012)

摘　　要：针对IEEE 802.3av标准所定义的对等速率万兆以太无源光网络(10G-EPON)ONU相关应用,设计了一种10 Gbit/s突发模式激光驱动器芯片,并对调制电路和偏置电路的设计进行了改进,以实现较短的突发开启/关断转换时间.本设计采用低成本的0.18μm CMOS工艺进行流片,整个芯片面积为575μm×675μm.测试表明:该芯片可工作在10.312 5 Gbit/s的速率上;当电源电压为1.8 V时,可对50Ω负载提供高达36 mA的调制电流.突发开启/关断转换时间均小于0.2 ns,远低于IEEE 802.3av标准所规定的上限.该突发模式激光驱动器的输出满足10G-EPON时序参数的规定,适用于10G-EPON ONU相关应用.A 10Gbit/s burst-mode laser diode driver is designed,which is optimized for symmetric-rate 10G-EPON optical network unit（ONU） applications described in the IEEE 802.3av standard.Several improvements are implemented in the design of the modulation circuit and the bias circuit,in order to shorten the burst turn-on/-off delays.It is designed with a low-cost 0.18μm CMOS process.The dimension of the laser diode driver IC is 575μm×675μm.On-chip test shows that it has a speed of 10.3125Gbit/s,and is able to provide up to 36mA modulation current on 50Ω load under a 1.8V power supply.The burst turn-on/-off delays are both less than 0.2ns,which is much less than the criteria that the IEEE 802.3av standard has proposed.The presented burst-mode laser diode divider meets the 10G-EPON timing parameter definitions,and is particularly suited to 10G-EPON ONU applications.

关 键 词：万兆以太无源光网络(10G-EPON) 激光驱动器 突发模式 IEEE802.3av CMOS 

分 类 号：TN911[电子电信—通信与信息系统]