双层PECVD氮化硅膜晶体硅太阳电池  

Crystalline silicon solar cells with PECVD dilayer SiN_x:H thin films

作　　者：屈盛 毛和璜 韩增华 汤叶华 周春兰 王文静[2] 张兴旺[3] 

机构地区：[1]欧贝黎新能源科技股份有限公司 [2]中国科学院电工研究所 [3]中国科学院半导体研究所

出　　处：《中国建设动态（阳光能源）》2011年第5期57-60,共4页

基　　金：江苏省科技基础设施建设计划项目(BM2009611);江苏省自然科学基金项目(BK2009620)

摘　　要：利用管式PECVD在太阳电池片上沉积双层折射率和厚度均不同的SiNx:H薄膜。这种双层SiNx:H薄膜是采用2个不同的硅烷氨气流量比在1次沉积过程中获得的,其第1子层(靠近硅片)具有较高的折射率和较薄的厚度,而第2子层具有较低的折射率和较厚的厚度。椭圆偏振测厚仪、微波光电导衰退(μ-PCD)以及I-V特性等的测试结果表明,这种折射率变化的双层SiNx:H薄膜,相比折射率单一的单层SiNx:H薄膜,具有更好的表面钝化效果,其所钝化的单晶硅太阳电池,光电转换效率可以绝对提高0.2%以上,而且在1个月内没有发生明显衰减。Dilayers of SiNx：H thin films containing two sub-layers with different refractivity and thickness were deposited onto silicon wafers via tube PECVD. These dilayer thin films were obtained in one deposition process applying two different silane-ammonia flow rates （SAR）and the down-layer （close to silicon wafer） is with higher refractivity and smaller thickness, while the up-layer is with lower refractivity and bigger thickness. Measurement results of ellipsometry, microwave photoconduction decay （μ-PCD）, and I-V characteristics indicate that, compare with one-layer SiNx：H thin film with fixed refractivity, these dilayer SiNx;H thin films with varying refractivity exhibit better suorace passivation properties, as conversion efficiencies of as-made solar cells increase 0.2%, absolutely, and no significant decay of efficiency is observed within one month.

关 键 词：晶体硅太阳电池 PECVD氮化硅双层膜 硅烷氨气比 

分 类 号：TN304.055[电子电信—物理电子学]